VS-VSKDS201/045 www.vishay.com vishay semiconductors revision: 23-may-16 1 document number: 93234 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 add-a-pak gen 7 power modules schottky rectifier, 100 a mechanical description the add-a-pak gen 7, new generation of add-a-pak module, combines the excelle nt thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structur e with minimized number of interfaces. features ? 175 c t j operation ? low forward voltage drop ? high frequency operation ? low thermal resistance ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? excellent thermal performances obtained by the usage of exposed direct bonded copper substrate ? high surge capability ? easy mounting on heatsink electrical description / applications the VS-VSKDS201.. schottky re ctifier doubler module has been optimized for low reverse leakage at high temperature. the proprietary barrier techno logy allows for reliable operation up to 175 c junction temperature. ? typical applications are in high current sw itching power supplies, plating power supplie s, ups systems, converters, freewheeling diodes, welding, and reverse battery protection. ? product summary i f(av) 100 a v r 45 v package add-a-pak gen 7 circuit two diodes doubler circuit add-a-pak major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 100 a v rrm 45 v i fsm t p = 5 s sine 8600 a v f 100 a pk , t j = 125 c 0.69 v t j range -55 to +175 c voltage ratings parameter symbol VS-VSKDS201/045 units maximum dc reverse voltage v r 45 v maximum working peak reverse voltage v rwm
VS-VSKDS201/045 www.vishay.com vishay semiconductors revision: 23-may-16 2 document number: 93234 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 123 c, rectan gular waveform 100 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 8600 10 ms sine or 6 ms rect. pulse 1850 non-repetitive avalanche energy e as t j = 25 c, i as = 24 a, l = 1 mh 270 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 20 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 100 a t j = 25 c 0.72 v 200 a 1.04 100 a t j = 125 c 0.69 200 a 0.98 maximum reverse leakage current i rm t j = 25 c v r = rated v r 10 ma t j = 125 c 90 maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 5200 pf typical series inductance l s measured lead to lead 5 mm from package body 7.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s maximum rms insulation voltage v ins 50 hz 3000 (1 min) 3600 (1 s) v thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -55 to +175 c maximum thermal resistance, ? junction to case per leg r thjc dc operation 0.52 c/w typical thermal resistance, ? case to heatsink per module r thcs 0.1 approximate weight 75 g 2.7 oz. mounting torque 10 % to heatsink a mounting compound is re commended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 nm busbar 3 case style jedec ? to-240aa compatible
VS-VSKDS201/045 www.vishay.com vishay semiconductors revision: 23-may-16 3 document number: 93234 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forwar d current (a) v fm - forwar d voltage drop (v) 0 0.5 1.0 2.0 1.5 2.5 1 10 100 1000 93234_01 t j = 25 c t j = 125 c t j = 175 c i r - reverse current (ma) v r - reverse voltage (v) 5 101520 35 30 40 25 45 0.001 0.01 0.1 1 10 100 1000 93234_02 t j = 125 c t j = 175 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 01020 40 30 50 1000 10 000 93234_03 t j = 25 c 0.01 0.1 1 0.00001 93234_04 0.0001 0.001 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance (c/w) 100 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 dc
VS-VSKDS201/045 www.vishay.com vishay semiconductors revision: 23-may-16 4 document number: 93234 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r allowable case temperature (c) i f(av) - average forwar d current (a) 200 150 100 50 250 300 0 80 140 180 0 40 60 100 160 120 20 93234_05 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc average power loss (w) i f(av) - average forwar d current (a) 80 120 100 140 60 40 20 160 0 93234_06 80 100 120 0 40 60 20 d = 0.75 d = 0.20 d = 0.25 d = 0.33 d = 0.50 rm s limit dc 1000 10 100 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 93234_07 1000 10 000 10 000 at any rated load condition and with rated v rrm applied following surge current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02
VS-VSKDS201/045 www.vishay.com vishay semiconductors revision: 23-may-16 5 document number: 93234 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95369 1 - vs-vs = vishay semiconductors product 2 - circuit configuration: 3 - s = schottky diode 4 - average current rating (20 = 200 a) 5 - product silicon identification 6 - voltage rating (045 = 45 v) kd = add-a-pak - 2 diodes in series device code 5 1 3 2 4 6 vs-vs kd s 20 1 / 045 (2) + (3) - (1) ~
document number: 95369 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-nov-08 1 add-a-pak generation vii - diode outline dimensions vishay semiconductors dimensions in millimeters (inches) 35 ref. 30 0.5 (1.18 0.020) 29 0.5 (1 0.020) viti m5 x 0.8 screws m5 x 0.8 18 (0.7) ref. 6.7 0.3 (0.26 0.012) 24 0.5 (1 0.020) 1 2 3 4 5 7 6 80 0.3 (3.15 0.012) 92 0.75 (3.6 0.030) 20 0.5 (0.79 0.020) 20 0.5 (0.79 0.020) 15 0.5 (0.59 0.020) 22.6 0.2 (0.89 0.008) 6.3 0.2 (0.248 0.008)
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